Abstract
Electronic properties of manganites are significantly important for various spintronic applications such as microelectronics, magnetic data storage, communication technologies, and memory devices. Influence of applied electric field on the room temperature charge transport in ZnO/La0.7Sr0.3MnO3/SrNb0.002Ti0.998O3 (SNTO) heterostructure has been investigated using field effect studies. Large negative and positive electroresistance has been observed in heterostructure under various possible circuit geometries. Field effect studies have been carried out using three different circuit geometries, namely: (i) ZnO as a control electrode (ELZ), (ii) SNTO as a control electrode (ELS), and (iii) shorted ZnO and SNTO as control electrodes (ELZS). For this, channel electric field (ECH) dependent variation in channel resistance (RC) (of manganite channel) and I-V (across manganite channel) under various control fields (EC) have been studied. Variation in barrier height (ΦB) with control field (EC) for different geometries has been discussed.
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