Abstract
A set of strained-layer GexSi1-x/Si multiple quantum wells has been investigated by electroreflectance (ER) spectroscopy. In the ER spectra we have observed transitions in the quantum wells associated with the critical points E0, E1, as well as E'0. The transitions of E0 and E'0, which are very weak in the bulk material, are apperently enhanced in quantum wells.
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