Abstract
Electroreflectance (ER) spectroscopy has been used to study asymmetric coupled quantum wells in the GaAs AlGaAs and InGaAs GaAs systems, having 5 nm and 10 nm wells separated by either 1.5 nm or 2.5 nm barriers. We find that the line shapes and relative intensities of the n = 1 allowed interband transitions are very sensitive to the coupling between the wells. This leads to changes in the ER line shape, which can be used to characterize the resonance of the coupling in terms of a modulated dielectric function. The modulation observed is due to both a gap modulation and an intensity modulation caused by the electric field. This allows for a probe of the behavior of the coupled system in terms of wave function transfer between adjoining wells.
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