Abstract
Electroreflectance (ER) spectra of ordered Ga 0.5In 0.5P alloys grown on GaAs by organometallic vapor phase epitaxy (OMVPE), have been investigated in the region of the E 0 and E 1 band edges, together with their photoluminescence (PL) measurements and transmission electron diffraction (TED) observation. The ordered OMVPE-grown Ga 0.5In 0.5P alloys have shown an anomalous shift of the PL peak energy at the E 0 band edge, and exhibit CuPt-type ordering. Growth temperature, V/III ratio and substrate orientation effects on ER spectra have been studied. The results reveal anomalous ER structures which appear in ordered OMVPE-grown Ga 0.5In 0.5P alloys on (001) GaAs and are not observed in bulk and LPE-grown Ga 0.5In 0.5P alloys. In particular, the ER structures observed at 2.2 and 2.4 eV have been explained by ordering-induced pseudodirect interband transitions. Substrate orientation effects have shown that the anomalous ER spectra are observed only on (001) GaAs substrates and not on (111)B GaAs substrates. This result suggests that the origin of the ordering in OMVPE-grown Ga 0.5In 0.5P alloys is closely related to the surface atomic structure of the GaAs substrate.
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