Abstract
We have measured the electric-field dependence of the electroreflectance intensities of the heavy-hole and light-hole exciton transitions associated with the first (n=1) subbands in a GaAs (6.4 nm)/AlAs (0.9 nm) superlattice embedded in a p-i-n structure at 77 K. It is found that the electroreflectance intensities are highly sensitive probes to detect the resonant couplings between the Wannier-Stark localization states owing to the intensity reduction induced by the wave-function delocalization. We have clearly detected the various resonant couplings between the hole subbands, which have not been observed yet, in addition to those between the electron subbands. We have analyzed the electroreflectance-intensity change for the resonant coupling on the basis of the overlap integral between the electron and hole wave functions by using a transfer-matrix method with the Airy function.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
