Abstract
n this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used as an evaporation source. The electrophysical characteristics as a function of optimumfilm growth parameters—the correlation between the argon and oxygen flows, the substrate temperature, and the discharge power of the magnetron—are studied
Highlights
Indium tin oxide (ITO), which is a wide-bandgap semiconductor exhibiting chemical and thermal stability and high optical transparency at wavelengths of λ > 300 nm, is a promising material for the development of photoreceptors and functional sensors in the near-ultraviolet region (185 nm) [1, 2]
Indium tin oxide films are commonly used in semiconductor devices [3], such as liquid crystal displays and light emitters [4]
Indium tin oxide films are commonly used in other commercial applications, many other transparent conductive oxide films have been developed to replace ITO [7]
Summary
Indium tin oxide (ITO), which is a wide-bandgap semiconductor exhibiting chemical and thermal stability and high optical transparency at wavelengths of λ > 300 nm, is a promising material for the development of photoreceptors and functional sensors in the near-ultraviolet region (185 nm) [1, 2]. Indium tin oxide films are commonly used in other commercial applications, many other transparent conductive oxide films have been developed to replace ITO [7]. The following methods are most commonly used to grow ITO thin films: electron beam deposition, ionic or thermal evaporation, laser evaporation, cathode or high-frequency (HF) sputtering in an electric field, and magnetron sputtering of a target. Adhering to the one-to-one relationship between the deposition rate and the partial oxygen pressure in the chamber, it is possible to grow ITO:Ga2O3 films exhibiting optimum conductivity and transparency by varying the oxygen and argon content in the working atmosphere in a fairly wide range. The bandwidth of the resulting film can achieve values in a range of 3.6 eV for ITO to 4.6 eV for -Ga2O3 at electrical and optical parameters comparable to the parameters of ITO
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