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Abstract
Charge transport in integrated ferroelectric capacitors Pt/PZT/Pt/Ti/SiO2/Si is studied. The PZT films prepared with 15% of Pb excess by sol-gel deposition show the (111) textured polycrystalline structure. The current flowing through PZT grains is shown to be significantly larger than the current flowing along grain boundaries. Ferroelectric hysteresis loops, current-voltage dependences, short-circuited photocurrent under film illumination by light with photon energy 2.7 eV are measured. The modified method of depolarization hysteresis loops is used to indicate the absolute value of non-switchable polarization. It is shown experimentally that depolarization with compensating bias or film illumination can change the film switching behavior.
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