Abstract
The electrical conductivity, Hall effect, ionization energy, and defect concentration of GaAs samples subjected to various forms of heat treatment were studied. The original material comprised single crystals grown by the Bridgman and Czochralski methods with electron concentrations of 2·1015−7·1017 cm−3. The ionization energy and defect concentration were calculated with an electronic computer. The thermal conversion of GaAs was attributed to traces of copper, lattice defects, and residual impurities. The mobility varied in a complicated manner with the temperature of heat treatment in GaAs samples retaining their original n-type conductivity.
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