Abstract
Measurements of the transverse magnetoresistance and the Hall effect of compensated n-Ge crystals in the weak and strong magnetic fields at liquid nitrogen temperature have been carried out. It was revealed that in crystals with a sufficiently high degree of compensation, the space charge regions play a significant role in the scattering of charge carriers, which cause an increase in the transverse magnetoresistance (with increasing H) and its linear dependence on H in the region of strong magnetic fields. It was shown that in sufficiently strongly compensated crystals, the scattering of current carriers by the space charge regions is practically isotropic. It was found that thermal annealing (350 °C; 60 h) of compensated oxygen-containing n-Ge, which significantly reduces the compensation degree due to the arising donor-type oxygen complexes, leads to a decrease in the slope of the field dependences of the transverse magnetoresistance in the quantizing magnetic fields.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
