Abstract
The electrophysical and photoelectrical properties of MIS structures are studied using MBE grown heteroepitaxial HgCdTe with inhomogeneous composition distribution. It is shown that surface varib- and layers with increased surface CdTe composition in n-Hg1 − x Cd x Te-based MIS structures (x = 0.21–0.23) strongly affect the dependences of capacity and photo-emf on the voltage bias and frequency. Parameters of n-Hg0.7Cd0.3Te-based MIS structures with periodic barrier-type regions of increased CdTe composition are studied, and their effect is shown on the parameters of MIS structures when they are located near the dielectric-semiconductor interface. Electrical properties of n-Hg1 − x Cd x Te-based MIS structures (x = 0.62–0.73) with potential-well regions of decreased CdTe composition in the surface region are studied.
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