Abstract
Amorphous silicon film with extremely high dark resistivity, 1013–1014 ohm-cm, at room temperature is prepared for the first time by glow discharge decomposition of SiH4 with suitable doping by B2H6 and a slight content of oxygen. The a-Si: H film exhibits an excellent photoconductive sensitivity in visible wavelength range. Room temperature electron and hole drift mobilities are found to be almost the same in a-Si: H film deposited at 200°C of the substrate temperature and 10-3 B2H6/SiH4 doping gas ratio. These unique properties of a-Si: H films are utilized for bi-chargable monolayer electrophotographic photoreceptor, and positive and negative reproduced images have been firstly demonstrated by utilizing a-Si: H deposited drum.
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