Abstract
Abstract Nanolayers were deposited onto surfaces of n-type InP single crystal wafers by electrophoresis from reverse micelle colloid solutions containing palladium nanoparticles. Two types of nanolayers were deposited, by applying a positive potential or a negative potential on the InP wafer. Further, wafers with nanolayers were annealed in high vacuum at 400 °C. The nanolayers were studied using capacitance–voltage characteristics on a mercury probe, by atomic force microscopy and by secondary-ion mass spectroscopy. Two types of Schottky-like diodes were prepared on wafers with the two types of nanolayers and studied by current–voltage characteristics. The diodes with nanolayers deposited by applying the positive potential, which contained Pd nanolayers, showed characteristics with better rectifying properties than the other type of diodes. Correlations among measured characterizations were found.
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