Abstract
AbstractTin monoselinide thin films were obtained by solid state reaction in vacuum. They were characterised by X‐ray diffraction and subjected to resistivity and optical absorbance measurements. The data were analysed for obtaining activation energy and band gap. The effects of varying deposition parameters were studied. These films are concluded to be superior to those obtained directly from the compound semiconductor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.