Abstract
The electrooptic (EO) properties of light propagated through lead zirconate titanate (PZT) films prepared on silicon (Si) substrates were successfully evaluated. Polycrystalline, {101}-oriented and {100}-oriented epitaxial PZT films with a thickness of approximately 2 µm were prepared on various types of Si substrate by chemical solution deposition. The anisotropic EO effect was observed in the polycrystalline and {101}-oriented PZT films. The in-plane and out-of-plane refractive indices of the {100}-oriented epitaxial PZT films changed with the type of substrate. The EO effect of the {100}-oriented epitaxial PZT film grown on a Si substrate was found to be more isotropic than those of the polycrystalline and {101}-oriented PZT films. The largest EO coefficients (re=54 pm/V and rc=60 pm/V) were obtained in the {101}-oriented PZT film on the Si substrate.
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