Abstract
For the purpose of experimentally demonstrating the enhancement of electron-wave reflection by a multi-quantum barrier (MQB) consisting of multiple combinations of quarter de Broglie wavelength hetero-stacks, we have fabricated two types of n-GaAs/i-barrier/n-GaAs tunneling diodes with a bulk AlxGa1−xAs barrier and an AlxGa1−xAs/GaAs MQB. From the current-voltage characteristic at 77 K, it has been clarified that electrons are well reflected by the MQB. The potential barrier height, virtually increased by the MQB, is estimated to be about 80 meV, which is in good agreement with a theoretical expectation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.