Abstract

The electron-stimulated O− dissociation of O2 gas is well understood [1]. In the energy range from 4 to 10 eV, O− ions are produced by dissociative attachment (DA) via the transient \({{o}_{2}}\overline {} {{(}^{2}}{{\Pi }_{u}})\) state. This same DA process has been identified in electron-stimulated desorption (ESD) of O− ions from O2 condensed on thick rare-gas (Ar, Kr, or Xe) films [2].

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