Abstract
A total cross section σD=(5±2.6)×10−18 cm2 is measured for electron-stimulated desorption (ESD) of deuterium from a boron-doped, deuterated diamond(100) surface at 5 eV incident electron energy. This large ESD cross section means a significant contribution of ESD to hydrogen abstraction reactions in microwave-driven chemical vapor deposition of diamond. The ESD cross section decreases when changing to a nitrogen-doped diamond. This change is suggested to be the reason for the reported influence of small concentrations of nitrogen or boron added to the process gas on diamond growth.
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