Abstract
We theoretically investigate Dresselhaus spin-orbit coupling (SOC)-induced spin-polarized transport for electrons tunneling through single-layered semiconductor nanostructure (SLSN, InSb). A considerable electron-spin polarization is observed in this SLSN. Spin polarization ratio is associated with the electron energy and in-plane wave vector; in particular, it can be manipulated by the strain engineering or the layer thickness. Based on this SLSN, a controllable electron-spin filter is proposed for spintronics device applications.
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