Abstract
Silicon Solar Cells In article number 2201512, Zengguang Huang and colleagues prepared Al-doped TiO2 (ATO) thin films by atomic-layers-deposited (ALD) technique. The films were observed to possess the highest minority carrier lifetime of 253.0 μs and a significantly low contact resistivity ρc of 19.7 mΩ cm2 on solar-grade silicon. A highest efficiency of 19.9% was obtained for an n-type c-Si solar cell with a full-area rear ATO/LiF/Al electron-selective contact.
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