Electron–phonon interaction effects on the surface states in wurtzite nitride semiconductors

Abstract

A variational approach is used to study the surface states of an electron in a semi-infinite wurtzite nitride semiconductor. The surface-state energy of the electron is calculated, by taking the effects of the electron–surface optical phonon interaction and structure anisotropy into account. The numerical computation has been performed for the energies of the electronic surface states as a function of the surface potential V 0 for wurtzite GaN, AlN, and InN, respectively. The results show that the electron–phonon interaction lowers the surface state energy. It is also found that the energies of the electronic surface-state in wurtzite structures are lower than that in the zinc-blende structures by hundreds of meV for the materials calculated. The influence of e–p-interactions on the surface state of electron cannot be neglected.