Abstract
The theory of Raman scattering by the electron--phonon coupled system in metals and heavily doped semiconductors is developed taking into account the Coulomb screening and the electron--phonon deformation interaction. The Boltzmann equation for carriers is applied. Phonon frequencies and optic coupling constants are renormalized due to interactions with carriers. The $k-$dependent semiclassical dielectric function is involved instead of the Lindhard-Mermin expression. The results of calculations are presented for various values of carrier concentration and electron-phonon coupling constant.
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