Abstract
Dynamic coalescence and autocoalescence processes were investigated in discontinuous metallic films (gold, silver and indium) on amorphous (SiO x , carbon and MgO) and monocrystalline (KCl, silicon and MgO) substrates under electron irradiation. Effective coefficients D B for the surface diffusion of islands were estimated. It was found that under electron irradiation D B is 10 −15-10 D−16 cm 3 s −1, which is one to two orders of magnitude higher than D B under thermal annealing. The influence of the degree of orientation of islands on the coalescence process was studied. A theoretical model of the phenomena is presented.
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