Electronics for fast ion extraction from EBIS devices

Abstract

Future synchrotrons for cancer therapy could profit from single turn injection in terms of size, costs, and ease of operation [O. Kester, R. Becker, and M. Kleinod, Rev. Sci. Instrum. 67 (1996)]. Short (∼1.5 μs) and intense (∼1.3 mA) pulses of highly charged light ions (C6+, N7+, O8+) are a requirement for these future therapy facilities which can be provided by an EBIS ion source. Such a medically dedicated EBIS has an electron beam of 400 mA at 5 keV and needs an electron current density of 100 A/cm2 for a repetition rate of 10 Hz. To obtain a 1.5 μs ion pulse it is necessary to switch the drift tube potentials up to 1.6 kV (for a ratio of beam to drift tube of 1/20) in some 100 ns. To avoid spreading out of the pulse due to the restoration of the full space charge depression at locations where ions have already been extracted, the potentials applied to the drift tubes are changed with time. They will be adjusted for each drift tube according to the transit time of the ion pulse. Furthermore, the drift tubes are fully interpenetrating each other with tapered fingers in order to locally distribute the action of the applied potentials. This provides a potential wall, which is following the extracted ion pulse and results in a compressed short ion pulse for single turn injection into a synchrotron.