Abstract
New current mode grounded memcapacitor emulator circuits are reported in this paper, based on a single voltage differencing transconductance amplifier-VDTA and two grounded capacitors. The proposed circuits possess a single active component matching constraint, while the MOS-capacitance can be used instead of classical capacitance in a situation involving the simulator working within a high frequency range of up to 50 MHz, thereby offering obvious benefits in terms of realization utilising an IC-integrated circuit. The proposed emulator offers a variable switching mechanism—soft and hard—as well as the possibility of generating a negative memcapacitance characteristic, depending on the value of the frequency of the input current signal and the applied capacitance. The influence of possible non-ideality and parasitic effects was analysed, in order to reduce their side effects and bring the outcome to acceptable limits through the selection of passive elements. For the verification purposes, a PSPICE simulation environment with CMOS 0.18 μm TSMC technology parameters was selected. An experimental check was performed with off-the-shelf components-IC MAX435, showing satisfactory agreement with theoretical assumptions and conclusions.
Highlights
In 1971 [1], Leon Chua introduced the memristor into theory as the fourth passive element to describe the missing relationship between magnetic flux and electric charge
All of the above was the main inspiration and the reason why this paper offers a completely new and original approach in the implementation of memcapacitor emulation circuits, based on the application of only one active block—the voltage differencing transconductance amplifier (VDTA) that has proven its good performance in many applications related to analog signal processing
This paper proposes a completely new structure of current-mode grounded chargecontrolled memcapacitance emulator, based on the application of VDTA
Summary
In 1971 [1], Leon Chua introduced the memristor into theory as the fourth passive element to describe the missing relationship between magnetic flux and electric charge. The obtained Equation (11) indicates that the presented memcapacitance emulator introduces the control transconductance parameter gmS of VDTA, in addition to frequency and amplitude value of the input current signal. These points are determined by the moment when the input current signal reaches the transition point—the so-called zero-crossing (assuming the input current is defined as Imcosωt), and provided that the value of the voltage is as small as possible, i.e., converges to zero [36,37]. In order to reduce the impact of the parasitic resistances, the values of C1 and C2 must be chosen as 1/sC
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