Abstract
Hexagonal WO3 nanowires were prepared on Si substrate by thermal evaporation of WO3 powder. A single WO3 nanowire was assembled on a pair of Pt electrodes by electric field assembly. The electrical transport behavior indicates that the back-to-back SBs structure is formed, which show nonlinear and asymmetric I-V properties. Through measurement of the I-V curve and the calculation of barrier height difference under illumination, it is found that the electrical asymmetry results from the asymmetric barrier height of the two Schottky barriers, which are dominated by the surface states of nanowire caused by O2 adsorption in the electric assembling process.
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