Abstract
Chemical decorated heterojunction Pb/Pb-Si nanochain devices and their electron transport properties are systematically investigated. These Pb-Si nanochain heterostructures are found to show semimetal and graphene-like properties on electronic transport. Particularly, some devices show some excellent performance with large on-off ratios, small sub-threshold swing and high peak-to-valley ratio (PVR). A link between heterojunction mode and semiconductor-semimetal-metal transformation characteristic has been built. In addition, multi-peak negative differential resistance (NDR) effect has been observed on this heterostructure. Moreover, the performance of heterojunction Pb/Pb-Si nanochain devices is observed to be effectively modulated by gate potential. These findings are very valuable for potential implications for the design of high-performance new-generation microelectronic devices.
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