Electronic transport properties of amorphous Ti-Ni and Hf-Ni alloys

Abstract

Measurements of electrical resistivity rho and the Hall coefficient RH of codeposited amorphous Ti1-xNix films from 1.7 K to 300 K over the composition range 0.08<x<0.72 along with measurements of the Hall coefficient for four compositions of melt-spun amorphous Hf1-xNix ribbons are reported. RH changes sign from positive to negative as the Ni concentration is increased and has a weak temperature dependence. The Hall resistivity of Ni-rich alloys indicates a ferromagnetic transition. For Ni-based amorphous alloys, the critical concentration of Ni at which the Hall coefficient changes sign from positive to negative does not vary appreciably for ETM components of the same column. The room-temperature resistivity ranges from 190 to 300 mu Omega and shows a small temperature dependence with a negative TCR, which is typical of amorphous alloys. RH-RH0 (the Lorentz contribution) shows an almost universal scaling with rho 2 as a function of Ni composition x for M(Hf, Zr, Ti)-Ni alloys.