Electronic-transport properties of amorphous Cu-Ti films.

Abstract

We have measured the thermopower and resistivity of vapor-deposited amorphous Cu-Ti films of widely varying composition, at temperatures from 4.2 to 300 K. An explanation of the temperature variation in resistivity, but not in thermopower, requires a mechanism additional to the temperature dependence of the structure factor in the Ziman-Faber model. The magnitude of the resistivity, its temperature variation, and the thermopower are all larger in a ${\mathrm{Cu}}_{47}$${\mathrm{Ti}}_{53}$ film than in corresponding melt-spun metallic glass ribbons, indicating greater disorder scattering, but differences between Cu-rich films and ribbons are more complex.