Abstract
Through a combination of single crystal growth, experiments involving in situ deposition of surface adatoms, and complimentary modeling, we examine the electronic transport properties of lithium-decorated ZrTe5 thin films. We observe that the surface states in ZrTe5 are robust against Li adsorption. Both the surface electron density and the associated Berry phase are remarkably robust to adsorption of Li atoms. Fitting to the Hall conductivity data reveals that there exist two types of bulk carriers: those for which the carrier density is insensitive to Li adsorption, and those whose density decreases during initial Li depositions and then saturates with further Li adsorption. We propose this dependence is due to the gating effect of a Li-adsorption-generated dipole layer at the ZrTe5 surface.
Highlights
Through a combination of single crystal growth, experiments involving in situ deposition of surface adatoms, and complimentary modeling, we examine the electronic transport properties of lithiumdecorated ZrTe5 thin films
In an effort to answer fundamental questions about the role of surface adsorption in modifying the topological surface states, ZrTe5 and Li-adsorbed-ZrTe5 were synthesized, studied and tested; the resistance responses were compared between the two phases
The small variation of the Berry phase in 11 runs again corroborates the exceptional robustness of the topological surface states against lithium adatom adsorption
Summary
Through a combination of single crystal growth, experiments involving in situ deposition of surface adatoms, and complimentary modeling, we examine the electronic transport properties of lithiumdecorated ZrTe5 thin films. The results of these calculations helped to identify an atomic species that should remain on the surface of a ZrTe5 sample at cryogenic temperatures but diffuse into the bulk as the sample warms to room temperature.
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