Abstract
The electronic properties of amorphous diamond-like carbon (DLC) films grown by r- f plasma assisted CVD of methane at low temperature on n-type silicon substrates were examined for potential electronic applications. Metal contacts (Al and Au) were deposited on the films and the constructed devices were characterised using temperature dependent current voltage ( I- V) measurements. Proper modelling and suitable techniques were applied on the experimental data, to analyze the measured quantities. As a result, a Schottky type conductivity was observed and analyzed. The barrier height of the metal contacts was found to be 0.35 eV for Au and 0.75 eV for Al.
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