Abstract
Nanodevices using individual indium nitride nanowires are fabricated bye-beam lithography. The nanowires have diameters of 40–80 nm, lengths up toseveral tens of micrometres and single-crystalline nature. We observed ohmicI–V behaviour of InN nanowires above nearly 100 K, which is consistent with the pinning Fermilevel of the metal electrode near the conduction band edge of InN nanowire. At lowtemperatures, the device shows typical semiconductor behaviour along with aquantum tunnelling effect through the Schottky barrier rather than thermallyactivated transport. The activation energy calculated above and below 80 K is 28.2and 5.08 meV, respectively. We have also fabricated a photocurrent generationdevice using InN nanowires. The photocurrent of an acceptor–sensitizer dyad withdi-(3-aminopropyl)-viologen (DAPV) and a Ru complex on an InN nanowires/ITO plate was8.3 nA cm−2, which increased by 62.7% compared to that without InN nanowire layers.
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