Abstract
Graphene/carbon nanotube (CNT) junctions were fabricated by depositing mechanically exfoliated graphene on substrate followed by direct chemical vapor deposition growth of CNT, and their electronic transport properties were investigated. Unlike metallic CNT/graphene junction with good contact, there exists an obvious Schottky barrier between semiconducting CNT and graphene due to the difference of their work functions, which lead to typical rectification properties and directionally field-effect behavior.
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