Electronic transport in Ru–Si–O and Ir–Si–O amorphous thin films

Abstract

We present here resistivity, Hall effect and magnetoresistance measurements at low temperatures (1 K< T<300 K) and under high magnetic field (B<8 T) of Ru 17Si 16O 67 and Ir 18Si 15O 67 amorphous thin film. These amorphous films are characterised by a mixture of metallic RuO 2 or IrO 2 and insulating SiO 2. For Ru 17Si 16O 67 the resistivity decreases with increasing temperature but the variation is too small to be described by a thermal activation law. The resistivity of Ir 18Si 15O 67 is lower than that of Ru 17Si 16O 67, increasing with temperature. The change is only about 2% over the whole temperature range. For both materials, the Hall effect is very small and negative and varies slightly with temperature. The magnetoresistance is very small and positive not exceeding 2% at lowest temperatures and highest fields.