Abstract
The electrical conductivity of various RuO2-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles.
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