Abstract
Measurements of the electrical resistivity, Hall effect, and magnetoresistance are reported for metallic iron disilicide layers, fabricated by ion-beam synthesis (IBS) and solid-state reaction (SSR) on (100)Si. The analysis of the data is consistent with three-dimensional weak-localization theories, including a strong spin-orbit interaction, and electron-electron interaction. The spin-orbit scattering and electron wave-function dephasing rates are extracted from nonlinear least-squares fits to the magnetoresistance and the low-temperature electrical resistivity. From both the magnetic field and temperature dependence it is found that the electron-electron interaction due to spin-splitting effects also contributes to the scattering in this material. For IBS and SSR fabricated iron disilicide layers the dephasing rate saturates below 4.2 K indicating a scattering contribution from magnetic impurities, and varies as ${\mathit{T}}^{\mathit{p}}$ above 4.2 K. From the magnetoresistance measurements in the temperature range between 20 and 50 K, the exponent of the dephasing rate is found to be about 3 in agreement with electron-phonon interband scattering being dominant, consistent with the overall temperature dependence of the resistivity at zero magnetic field.
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