Abstract
In this paper, we report on electronic transport and impedance measurements on thin films of unintentionally hole doped 3,6-dipyrenyl-N-hexylcarbazole. Evidence for doping from dc conductivity, ESR, and capacitance measurements is presented. From a study of the bias, temperature and frequency dependence of capacitance, we estimate the integrated density of states above the Fermi level to be 1017/cm3. This is also the doping concentration in these samples.
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