Abstract
The resistance R of a high density network of 6 nm diameter Bi wires in porous Vycor glass is studied in order to observe its expected semiconductor behavior. R increases from 300 K down to 0.3 K. Below 4 K, where R varies approximately as ln(1/T), the order-of-magnitude of the resistance rise, as well as the behavior of the magnetoresistance are consistent with localization and electron-electron interaction theories of a one-dimensional disordered conductor in the presence of strong spin-orbit scattering. We show that this behaviour and the surface-enhanced carrier density may mask the proposed semimetal-to-semiconductor transition for quantum Bi wires.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
