Electronic Transport Characteristics of a Graphene Nanoribbon Based p–n Device

Abstract

Electronic transport in terms of its parameters, such as electron effective mass, electron mobility, deformation potential (DP), electron Fermi velocity and energy band gap, is investigated for a boron and nitrogen codoped armchair graphene nanoribbon (aGNR) based p–n device via determination of electron interaction with acoustical phonons by deformation potential (DP) scattering mechanism and piezoelectric (PZ) scattering mechanism under the impact of finite electric field at low temperature regime. The variation of acoustical deformation potential (ADP) with electron Fermi velocity for a particular temperature has been studied. The dependence of electron mobility on the doping concentration as well as electron effective mass and lattice temperature have been observed for a boron and nitrogen doped graphene nanoribbon p–n device for its nanoelectronic and photovoltaic applications. The current-voltage characteristics have also been studied for the p–n device under the forward biased condition. The net electron mobility (ADP + PZ) for the region of boron doped aGNR is observed much higher in comparison with the region of nitrogen-doped graphene for a particular temperature. Moreover, it has also been observed that the electron mobility increases with boron doping in the P-region, but decreases with an increase in nitrogen concentration in the N-region of the armchair graphene nanoribbon based p–n device. The band gap shows considerable variation with impurity concentration for the width of nanoribbons less than 40 nm with respect to pristine graphene, whereas for that with widths of more than 50 nm to up to 100 nm there is no impact of concentration on the band gap.