Abstract
Simultaneous measurements of electrical conductivity \ensuremath{\sigma} and thermoelectric power Q were performed on a single crystal of ${\mathrm{Ba}}_{0.03}$${\mathrm{Sr}}_{0.97}$${\mathrm{TiO}}_{3}$ over an extensive range of temperature (500--1100?deC) and oxygen partial pressure (${10}^{\mathrm{\ensuremath{-}}18}$--1 atm) under thermal-equilibrium conditions. Analysis of the atmosphere dependence of \ensuremath{\sigma} and Q were found to be consistent with a defect model based on the generation and annihilation of shallow-donor-like oxygen vacancies and compensating background acceptor impurities. Following a theoretical approach proposed by Becker and Frederikse and by Jonker, analysis of the combined \ensuremath{\sigma} and Q data allowed, for the first time, determination of both electron [${\ensuremath{\mu}}_{e}$(950 ?(deC)=0.23 ${\mathrm{cm}}^{2}$/V?c] and hole [${\ensuremath{\mu}}_{e}$(950 ?(deC)=0.10 cm/V?c] mobilities at elevated temperatures. Further, large derived values for the electronic scattering factors (${A}_{e}$,${A}_{h}$=3.0) and temperature-independent Q-versus-${\mathrm{log}}_{10}$\ensuremath{\sigma} slopes strongly support a nonactivated large-polaron mobility mechanism for both electrons and holes.
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