Abstract
We present a systematic study on the rectifying behaviors of the heterojunctions composed of a ultrathin La0.67Sr0.33MnO3 film (∼2nm in thickness) and a SrTiO3 substrate doped by 0.05 or 1wt% Nb. These junctions exhibit excellent rectifying behaviors and a remarkable bias-dependent magnetoresistance (up to 60% under a field of 5T). The transport behaviors are dominated by thermal process and tunneling process for the junctions with low and high Nb contents, respectively.
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