Abstract
The electronic transport characteristics of crystalline g-C3N4 film and its device application were investigated. Crystalline g-C3N4 films ordered along the c-axis were formed via thermal chemical vapor deposition using melamine source. The chemical bonds of the film were confirmed to be the bond states that constitutes g-C3N4. In addition, the stoichiometric N/C ratio was estimated as 1.17 from the C1s and N1s signal intensities of X-ray photoelectron spectroscopy. A typical photoluminescence and Raman spectra of the g-C3N4 film was detected. Anisotropic transport characteristics with a dependence on the crystal orientation were observed, resulting in a high out-of-plane conductivity and a low in-plane conductivity. A Schottky barrier diode with a Au anode and Ti/Au cathode was fabricated as a vertical electronic device. Rectifying behavior was achieved for the diode, suggesting possibilities of electronic device applications of g-C3N4.
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