Abstract
Electronic transitions in mobility gap in glassy semiconductors are considered. Energies characteristics of the transitions, including de-trapping and luminescence energies, are in a simple way related to both the gap width and each other. Basic types of luminescence centres and some types of radiationless centres, including centres of photo-structural changes, are revealed. Correlations of the luminescence and its fatigue with some other photoinduced transitions are discussed. Some features of the luminescence are presented, including those associated with the inverse- Arrhenius law.
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