Electronic topological transition in AuX2 (X = In, Ga and Al) compounds at highpressures

Abstract

We present accurate x-ray diffraction data at high pressures for AuIn2,AuGa2 andAuAl2, obtained using a diamond anvil cell with the ELETTRA synchrotron source. Theresulting P–V data obtainedfrom the d-valueswere used to get the universal equation of state (UEOS), which is compared withtheoretical estimates. Deviation from linearity is evident in the UEOS curves ofAuIn2 and AuGa2, thus verifying that some of the observed anomalies inthese systems below 5 GPa are due to electronic topological transitions.