Abstract
A tight-binding type electronic theory is used to study the impurity segregation at lattice defects in metals. It is shown that the heat of segregation E segr results from a simple physical origin: It is roughly proportional to the difference in the diagonal matrix elements ( V i - V 0) of impurity potentials, where V i ( V 0) is determined for atomic sites in the vicinity of lattice defects (for a perfect lattice site). Applications to impurity segregation at cleaved surfaces, screw dislocations and tilt grain boundaries are discussed.
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