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Abstract
The ${B}_{?}$ magnetoconductivity in the V-shaped potential well of \ensuremath{\delta}-doped GaAs(Si) shows oscillatory behavior along the ${B}_{?}$ axis at constant ${N}_{s}$. At finite field ${B}_{?}$ the subband levels are raised by a diamagnetic energy shift and may be pushed over the Fermi level. Due to the formation of magnetoelectric subbands the E(k) dispersions are distorted. According to a self-consistent model calculation the features of \ensuremath{\sigma}(${B}_{?}$) are explained in terms of the oscillating density of states at the Fermi level.
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