Electronic structures of thiophene on Ge(100): the roles of coverage and temperature

Abstract

We investigated the adsorption and decomposition of thiophene(C4H4S) on Ge(100) using high-resolution photoemission spectroscopy. We found that theGe 3d and C 1s core-level spectra revealed three adsorption geometries, whichwe assigned to a weakly bound state (i.e., a Ge–S dative bonding state), a[4+2] cycloaddition bonding state, and a decomposed bonding state (a desulfurization reactionproduct) as functions of the molecular coverage and the annealing temperature. In thisstudy, we systematically elucidated the changes occurring in the bonding states ofthiophene species adsorbed on a Ge(100) substrate.