Abstract
We have investigated the interactions between p-type dopants (Be and Mg) and n-type codopants (Si and O) in p-type codoped GaN using first-principles calculations. Our results reveal that the co-incorporation of Be(Mg)Ga with ON or SiGa in codoped p-type GaN produces high Be(Mg) concentrations with stable ionic charge distributions markedly due to a decrease in the Madelung energy in contrast to p-type GaN doped with only Be(Mg). Our calculations thus predict that the “codoping method (doping n- and p-type dopants at the same time)” is effective for the fabrication of high-conductivity p-type GaN with a wurtzite structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
