Electronic structures of permethyloligosilane radical cations at the ground and low-lying excited states

Abstract

The electronic structures at the ground and low-lying excited states of permethyloligosilane radical cations, Si n (CH 3) 2 n+2 + ( n = 4–7), have been investigated using DFT and ab initio calculations. The calculations showed that positive charge (hole) is delocalized along the Si–Si main chain at the ground and first excited states. On the other hand, the hole is transferred to the methyl side-chain at the second and higher excited states. From these results, it was concluded that hole can move along the Si–Si main chain at thermal conditions. Also, it was predicted that intermolecular hole hopping takes place by photo-irradiation to the permethyloligosilane radical cation. The mechanism of hole transfer was discussed on the basis of the results.