Abstract
The band structures of In1−xGaxAs-InP strained-layer quantum wells are investigated theoretically in the bond-orbital model. For small x, the well material is subject to a compressive biaxial strain which lifts the HH1 subband further apart from the LH1 subband, resulting in smaller in-plane effective mass for holes. For large x, the strain becomes tensile and the LH1 subband is lifted upward with respect to the HHl subband. For x near the critical value, where the HHl and LHl energy levels cross each other, the valence-band structure undergoes a direct-to-indirect transition.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
