Abstract
We report the electronic properties of carbon nanotubes (CNTs) with monovacancy under an electric field, based on density functional theory. The threshold gate voltage required to accumulate electrons and holes strongly depend on the relative positions of the defects on the CNTs, with respect to the electrode. Additionally, the defects induce an internal electric field in the nanotubes, causing the the threshold gate voltage variation for the carrier accumulation. Furthermore, the defects cause the field to concentrate around them.
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